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S-82A1ABC-A6T5S Datasheet(PDF) 11 Page - Seiko Instruments Inc

Part # S-82A1ABC-A6T5S
Description  BATTERY PROTECTION IC FOR 1-CELL PACK
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Manufacturer  SII [Seiko Instruments Inc]
Direct Link  http://www.sii.co.jp
Logo SII - Seiko Instruments Inc

S-82A1ABC-A6T5S Datasheet(HTML) 11 Page - Seiko Instruments Inc

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BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.2.0_00
S-82A1A Series
11
2. Ta =
−40°C to +85°C
*1
Table 11
(Ta =
−40°C to +85°C
*1 unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
Detection Voltage
Overcharge detection voltage
VCU
VCU
− 0.045
VCU
VCU
+ 0.030
V
1
Overcharge release voltage
VCL
VCL
≠ VCU
VCL
− 0.080
VCL
VCL
+ 0.060
V
1
VCL = VCU
VCL
− 0.050
VCL
VCL
+ 0.030
V
1
Overdischarge detection voltage
VDL
VDL
− 0.080
VDL
VDL
+ 0.060
V
2
Overdischarge release voltage
VDU
VDL
≠ VDU
VDU
− 0.130
VDU
VDU
+ 0.110
V
2
VDL = VDU
VDU
− 0.080
VDU
VDU
+ 0.060
V
2
Discharge overcurrent detection voltage 1
VDIOV1
VDIOV1
− 0.003
VDIOV1
VDIOV1
+ 0.003
V
2
Discharge overcurrent detection voltage 2
VDIOV2
VDIOV2
− 0.005
VDIOV2
VDIOV2
+ 0.005
V
2
Load short-circuiting detection voltage
VSHORT
VSHORT
− 0.020 VSHORT VSHORT + 0.020 V
2
Charge overcurrent detection voltage
VCIOV
VCIOV
− 0.003
VCIOV
VCIOV
+ 0.003
V
2
Discharge overcurrent release voltage
VRIOV
VDD = 3.4 V
VDD
× 0.77
VDD
× 0.8
VDD
× 0.83
V
2
0 V Battery Charge Function
0 V battery charge starting charger voltage
V0CHA
0 V battery charge function
"available"
0.0
0.7
1.5
V
2
0 V battery charge inhibition battery voltage
V0INH
0 V battery charge function
"unavailable"
0.7
1.2
1.7
V
2
Internal Resistance
Resistance between VDD pin and VM pin
RVMD
VDD = 1.8 V, VVM = 0 V
250
1000
3000
k
Ω
3
Resistance between VM pin and VSS pin
RVMS
VDD = 3.4 V, VVM = 1.0 V
3.5
10
20
k
Ω
3
Input Voltage
Operation voltage between VDD pin and
VSS pin
VDSOP1
1.5
6.0
V
Operation voltage between VDD pin and
VM pin
VDSOP2
1.5
28
V
Input Current
Current consumption during operation
IOPE
VDD = 3.4 V, VVM = 0 V
2.0
5.0
μA
3
Current consumption during power-down
IPDN
VDD = VVM = 1.5 V
0.1
μA
3
Current consumption during overdischarge
IOPED
VDD = VVM = 1.5 V
1.0
μA
3
Output Resistance
CO pin resistance "H"
RCOH
2.5
10
30
k
Ω
4
CO pin resistance "L"
RCOL
2.5
10
30
k
Ω
4
DO pin resistance "H"
RDOH
2.5
10
30
k
Ω
4
DO pin resistance "L"
RDOL
2.5
10
30
k
Ω
4
Delay Time
Overcharge detection delay time
tCU
tCU
× 0.4
tCU
tCU
× 2.5
5
Overdischarge detection delay time
tDL
tDL
× 0.4
tDL
tDL
× 2.5
5
Discharge overcurrent detection delay time 1 tDIOV1
tDIOV1
× 0.4
tDIOV1
tDIOV1
× 2.5
5
Discharge overcurrent detection delay time 2 tDIOV2
tDIOV2
× 0.4
tDIOV2
tDIOV2
× 2.5
5
Load short-circuiting detection delay time
tSHORT
tSHORT
× 0.4
tSHORT
tSHORT
× 2.5
5
Charge overcurrent detection delay time
tCIOV
tCIOV
× 0.4
tCIOV
tCIOV
× 2.5
5
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by
design, not tested in production.


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