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IPD25N06S4L-30 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # IPD25N06S4L-30
Description  OptiMOS짰-T2 Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPD25N06S4L-30 Datasheet(HTML) 1 Page - Infineon Technologies AG

  IPD25N06S4L-30_15 Datasheet HTML 1Page - Infineon Technologies AG IPD25N06S4L-30_15 Datasheet HTML 2Page - Infineon Technologies AG IPD25N06S4L-30_15 Datasheet HTML 3Page - Infineon Technologies AG IPD25N06S4L-30_15 Datasheet HTML 4Page - Infineon Technologies AG IPD25N06S4L-30_15 Datasheet HTML 5Page - Infineon Technologies AG IPD25N06S4L-30_15 Datasheet HTML 6Page - Infineon Technologies AG IPD25N06S4L-30_15 Datasheet HTML 7Page - Infineon Technologies AG IPD25N06S4L-30_15 Datasheet HTML 8Page - Infineon Technologies AG IPD25N06S4L-30_15 Datasheet HTML 9Page - Infineon Technologies AG  
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IPD25N06S4L-30
OptiMOS
®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
I D
T C=25°C, V GS=10V
25
A
T C=100°C, V GS=10V
1)
17
Pulsed drain current
2)
I D,pulse
T C=25°C
92
Avalanche energy, single pulse
2)
E AS
I D=12.5A
12
mJ
Avalanche current, single pulse
I AS
-
25
A
Gate source voltage
V GS
-
±16
V
Power dissipation
P tot
T C=25°C
29
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
Value
V
DS
60
V
R
DS(on),max
30
m
W
I
D
25
A
Product Summary
PG-TO252-3-11
Type
Package
Marking
IPD25N06S4L-30
PG-TO252-3-11
4N06L30
Rev. 1.1
page 1
2015-10-07


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