T8M35T-600 datasheet(5/6 Pages) DYELEC

Part #	T8M35T-600

Description	8A TRIACS

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Manufacturer	DYELEC [DIYI Electronic Technology Co., Ltd.]

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CHARACTERISTICS

Mar.2015-REV.01

www.sddydz.com

8A TRIACS

Figure 7. Non repetitive surge peak on-state

current for a sinusoidal

Figure 8. Relative variation of gate trigger

current and gate trigger voltage versus junction

temperature

ITSM(A), I²t (A²s)

10

100

1000

0.01

0.10

1.00

10.00

dl /dt limitation: 50 A / µs

I²t

ITSM

Tj initial = 25 °C

tp(ms)

pulse with width t <10 ms, and corresponding value of I²t

p

IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

--5

50

0

--25

25

0

2

25

5

50

0

7

75

5

100

125

Tj(°C)

IGT Q3

IGT Q1-Q2

IGT Q1-Q2-Q3

typical values

Figure 9. Relative variation of holding current

and latching current versus junction

temperature

Figure 10. Relative variation of static dV/dt

immunity versus junction temperature

] /

T

IH IL

,[ j IH,IL[Tj = 25 °C]

0.0

0.5

1.0

1.5

2.0

--5

50

0

--25

25

0

2

25

5

50

0

7

75

5

100

125

Tj(°C)

IL

IH

typical values

dV / dt [Tj] / dV / dt [Tj = 125 °C]

0

1

2

3

4

5

6

7

25

50

75

100

125

VD =VR = 402 V

Tj(°C)

Figure 11. Relative variation of critical rate of

decrease of main current versus junction

temperature

Figure 12. Relative variation of leakage current

versus junction temperature

(dl / dt)c [Tj] / (dl / dt)c [Tj = 125 °C]

0

1

2

3

4

5

6

25

50

75

100

125

Tj(°C)

IDRM/IRRM [Tj;VDRM /VRRM] / IDRM/IRRM

[Tj = 125 °C; 600 V]

1.0E-03

1.0E-02

1.0E-01

1.0E+00

25

50

75

100

125

Tj(°C)

VDRM =VRRM = 600 V

VDRM =VRRM = 400 V

VDRM =VRRM = 200 V

for different values of blocking voltage

T8MxxT600 Series

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