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V61184 Datasheet(PDF) 2 Page - EM Microelectronic - MARIN SA

Part # V61184
Description  2, 4 and 8 Multiplex LCD Driver
Download  15 Pages
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Manufacturer  EMMICRO [EM Microelectronic - MARIN SA]
Direct Link  http://www.emmicroelectronic.com
Logo EMMICRO - EM Microelectronic - MARIN SA

V61184 Datasheet(HTML) 2 Page - EM Microelectronic - MARIN SA

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R
V6118
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Supply voltage range
VDD -0.3V to + 8V
LCD supply voltage range
VLCD -0.3V to + 9V
Voltage at DI, DO, CLK,
STR, FR, COL
VLOGIC -0.3V to VDD+0.3V
Voltage at V1 to V3, S1 to
S40
VDISP -0.3V to VLCD + 0.3V
Storage temperature range
TSTO -65 to +150°C
Power dissipation
PMAX 100mW
Electrostatic
discharge
max.
to
MIL-STD-883C
method 3015.7 with ref. to
VSS
VSMAX 1000V
Maximum soldering
conditions
TS
250°C x 10s
Table 1
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device
reliability or cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages
or
electric
fields;
however,
anti-static
precautions must be taken as for any other CMOS
component. Unless otherwise specified, proper operation
can only occur when all terminal voltages are kept within
the voltage range. Unused inputs must always be tied to
a defined logic voltage level.
Operating Conditions
Parameter
Symbol Min
Typ
Max Unit
Operating
Temperature
TA
-40
+85
°C
Logic supply voltage
VDD
2
5
6
V
LCD supply voltage
VLCD
2
5
8
V
Table 2
Electrical Characteristics
VDD = 5V ±10%, VLCD = 2 to 7V and TA = -40 to +85°C, unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Dynamic supply current
ILCD
See note 1
100
150
µA
Dynamic supply current
IDD
See note 1 at TA = 25°C
0.1
1
µA
Dynamic supply current
IDD
See note 1
3
12
µA
Dynamic supply current
IDD
See note 2
200
250
µA
Standby supply current
ISS
See note 3 at TA = 25°C
0.1
1
µA
Control Signals DI, CLK, STR, FR
and COL
Input leakage
IIN
0 < VIN < VDD
1
100
nA
Input capacitance
CIN
at TA = 25°C
8
pF
Low level input voltage
VIL
0
0.8
V
High level input voltage for DI, STR,
FR and COL
VIH
2.0
VDD
V
High level input voltage for CLK
VIH
3.0
VDD
V
Data Output DO
High level output voltage
VOH
IH = 4 mA
2.4
V
Low level output voltage
VOL
IL = 4 mA
0.4
V
Driver Outputs S1 … S40
Driver impedance (note 4)
ROUT
IOUT = 10µA, VLCD = 7V
0.5
1.5
k
Driver impedance (note 4)
ROUT
IOUT = 10µA, VLCD = 3V
1.2
2.5
k
Driver impedance (note 4)
ROUT
IOUT = 10µA, VLCD = 2V
9
k
Bias impedance V1, V2, V3 (note 5)
RBIAS
IOUT = 10µA, VLCD = 7V
16
20
k
Bias impedance V1, V2, V3 (note 5)
RBIAS
IOUT = 10µA, VLCD = 3V
18
25
k
Bias impedance V1, V2, V3 (note 5)
RBIAS
IOUT = 10µA, VLCD = 2V
30
k
DC output component
± VDC
see Tables 4a & 4b,
VLCD = 5V
30
50
mV
Table 3
Note 1
: All outputs open, STR at VSS, FR = 400 Hz, all other inputs at VDD.
Note 2
: All outputs open, STR at VSS, FR = 400 Hz, fCLK = 1 MHz, all other inputs at VDD.
Note 3
: All outputs open, all other inputs at VDD.
Note 4
: This is the impedance between of the voltage bias level pins (V1, V2 or V3) and the output pins S1 to S40
when a given voltage bias level is driving the outputs (S1 to S40)
Note 5
: This is the impedance seen at the segment pin. Outputs measured one at a time.
Copyright
© 2004, EM Microelectronic-Marin SA
2
www.emmicroelectronic.com


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