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1SS110 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part # 1SS110
Description  Silicon Epitaxial Planar Diode for Tuner Band Switch
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

1SS110 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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1SS110
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
35
V
Forward current
I
F
100
mA
Junction temperature
Tj
175
°C
Storage temperature
Tstg
–65 to +175
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
—
—
1.0
V
I
F = 10mA
Reverse voltage
V
R
35
—
—
V
I
R = 10µA
Reverse current
I
R
—
—
0.1
µAV
R = 25V
Capacitance
C
—
—
1.2
pF
V
R = 6V, f = 1MHz
Forward resistance
r
f
—
—
0.9
Ω
I
F = 2mA, f = 100MHz


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