Trench Field Stop IGBTs with Fast Recovery Diode

KGF65A6H, MGF65A6H

Data Sheet

xGF65A6H-DSE Rev.1.8

SANKEN ELCTRIC CO.,LTD.

1

Nov. 10, 2016

http://www.sanken-ele.co.jp/en

© SANKEN ELECTRIC CO.,LTD. 2014

Description

The KGF65A6H and MGF65A6H are 650 V Field

Stop IGBTs. Sanken original trench structure decreases

gate capacitance, and achieves high speed switching and

switching loss reduction. Thus, these Field Stop IGBTs

can improve the efficiency of your circuit.

Features

● Low Saturation Voltage

● High Speed Switching

● With Integrated Fast Recovery Diode

● RoHS Compliant

● V

● I

● Short Circuit Withstand Time ----------------------- 10 μs

● V

● t

● V

Applications

● Welding Invertor

● PFC Circuit

Packages

TO247-3L

TO3P-3L

(2)(4)

(3)

(1)

(1) Gate

(2) Collector

(3) Emitter

(4) Collector

Not to scale

Selection Guide

Part Number

Package

KGF65A6H

TO247-3L

MGF65A6H

TO3P-3L

余白上 35mm

(4)

(4)

(1) (2) (3)

(1) (2) (3)