SPB08P06PG datasheet(3/8 Pages) INFINEON

Part #	SPB08P06PG

Description	SIPMOS짰 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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SPB08P06P

G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

335

420

pF

Output capacitance

C oss

-

105

135

Reverse transfer capacitance

C rss

-65

95

Turn-on delay time

t d(on)

-16

24

ns

Rise time

t r

-46

69

Turn-off delay time

t d(off)

-48

72

Fall time

t f

-14

21

Gate Charge Characteristics

Gate to source charge

Q gs

-

-1.9

-2.6

nC

Gate to drain charge

Q gd

--5

-8

Gate charge total

Q g

-

-10

-13

Gate plateau voltage

V plateau

--6

-

V

Reverse Diode

Diode continuous forward current

I S

-

-8.8

A

Diode pulse current

I S,pulse

-

-35.3

Diode forward voltage

V SD

V GS=0 V, I F=-8.83 A,

T j=25 °C

-

-1

-1.55

V

Reverse recovery time

t rr

-60

90

ns

Reverse recovery charge

Q rr

-

100

150

nC

T A=25 °C

Values

V GS=0 V, V DS=-25 V,

f =1 MHz

V DD=-30 V, V GS=-

10 V, I D=-6.2 A,

R G=6 Ω

V DD=-48 V, I D=-8.8 A,

V GS=0 to -10 V

V R=30 V, I F=|I S|,

di F/dt =100 A/µs

Rev 1.

7

page 3

20

12-09-07

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