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SPA11N80C3 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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SPA11N80C3 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 10 page SPA11N80C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=11 A pulsed I F=f(V SD); t p=10 µs parameter: V DD parameter: T j 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=2.2 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 25 °C 150 °C 150°C (98%) 25°C (98°C) 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 V SD [V] 160 V 640 V 0 2 4 6 8 10 0 10 20 30 40 50 60 70 Q gate [nC] 680 720 760 800 840 880 920 960 -60 -20 20 60 100 140 180 T j [°C] 0 100 200 300 400 500 25 50 75 100 125 150 T j [°C] Rev. 2.9 2 page 6 20 14-02-14 |
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