SN7002W_11 datasheet(3/8 Pages) INFINEON

Part #	SN7002W

Description	SIPMOS횘 Small-Signal-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 8 page

2011-07-13

Rev. 2.5

Page 3

SN7002W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

gfs

VDS≥2*ID*RDS(on)max,

ID=0.18A

0.1

0.21

-

S

Input capacitance

Ciss

VGS=0, VDS=25V,

f=1MHz

-

34

45

pF

Output capacitance

Coss

-

7.2

9.6

Reverse transfer capacitance

Crss

-

3

4.5

Turn-on delay time

td(on)

VDD=30V, VGS=10V,

ID=0.23A, RG=6Ω

-

2.4

3.6

ns

Rise time

tr

-

2.8

4.2

Turn-off delay time

td(off)

-

6

9

Fall time

tf

-

8.5

12.75

Gate Charge Characteristics

Gate to source charge

Qgs

VDD=48V, ID=0.23A

-

0.11

0.17

nC

Gate to drain charge

Qgd

-

0.42

0.63

Gate charge total

Qg

VDD=48V, ID=0.23A,

VGS=0 to 10V

-

1

1.5

Gate plateau voltage

V(plateau) VDD=48V, ID = 0.23 A

-

3.4

-

V

Reverse Diode

Inverse diode continuous

forward current

IS

TA=25°C

-

0.23

A

Inv. diode direct current, pulsedISM

-

0.92

Inverse diode forward voltage VSD

VGS=0, IF=0.23A

-

0.85

1.2

V

Reverse recovery time

trr

VR=30V, IF=lS,

diF/dt=100A/µs

-

10.8

16.2

ns

Reverse recovery charge

Qrr

-

3.2

4.8

nC

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