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T835-600G Datasheet(PDF) 4 Page - STMicroelectronics |
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T835-600G Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 11 page BTA08, BTB08 and T8 Series 4/11 Figure 1: Maximum power dissipation versus RMS on-state current (full cycle) Figure 2: RMS on-state current versus case temperature (full cycle) Figure 3: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle) Figure 4: Relative variation of thermal impedance versus pulse duration Figure 5: On-state characteristics (maximum values) Figure 6: Surge peak on-state current versus number of cycles P(W) 0 1 23 45 678 0 1 2 3 4 5 6 7 8 9 10 I (A) T(RMS) 0 25 50 75 100 125 0 1 2 3 4 5 6 7 8 9 10 I (A) T(RMS) T (°C) C BTA BTB / T8 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 I (A) T(RMS) T (°C) C DPAK (S=1CM ) 2 2 DPAK (S=0.5CM ) 2 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1E-3 1E-2 1E-1 1E+0 K=[Z /R th th] t (s) p Zth(j-c) DPAK/IPAK Zth(j-a) TO-220AB/D PAK 2 Zth(j-a) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 I (A) TM V (V) TM T max. V = 0.85V R = 50 m j to d Ω T= j T max. j T = 25°C j . 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 I (A) TSM Number of cycles t=20ms One cycle Non repetitive T initial=25°C j Repetitive T =110°C C |
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