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BA3123F-E2 Datasheet(PDF) 9 Page - Rohm |
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BA3123F-E2 Datasheet(HTML) 9 Page - Rohm |
9 / 16 page BA3123F 9/12 TSZ02201-0C2C0EZ00400-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 13.Nov.2015 Rev.001 www.rohm.com TSZ22111・15・001 Operational Notes – continued 12. Regarding the Input Pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Figure 15. Example of monolithic IC structure 13. The capacitors of Pin2 (VM1), and Pin 6 (VM2) should maintain the ratio of 2:1 for ripple rejection characteristics. Maintaining this ratio will prevent the significant decrease on ripple rejection even if the capacitance is reduced to half. 14. Setting the capacitor value to twice or half will make CMRR +6dB or -6dB respectively (Figure 10) in the low frequency range. N N P + P N N P + P Substrate GND N P + N N P + N P P Substrate GND GND Parasitic Elements Pin A Pin A Pin B Pin B B C E Parasitic Elements GND Parasitic Elements C B E Transistor (NPN) Resistor N Region close-by Parasitic Elements |
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