KMB9530 datasheet(3/4 Pages) KERSEMI

Part #	KMB9530

Description	Advanced high cell denity trench technology for ultra RDS(ON)

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Manufacturer	KERSEMI [Kersemi Electronic Co., Ltd.]

Direct Link	http://www.kersemi.com

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KMB9530

KERSMI ELECTRONIC CO.,LTD.

-100V

P-channel MOSFET

www.kersemi.com

3

Notes:

1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.

2. The data tested by pulse width≤300us,duty cycle≤2%

3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A

4. The power dissipation is limited by 150℃ junction temperature.

Typical Characteristics TJ=25℃ unless otherwise noted

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

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