STF13N60DM2 datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STF13N60DM2

Description	N-channel 600 V, 0.310 (ohm) typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package

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STF13N60DM2

Electrical ratings

DocID029201 Rev 2

3/13

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

V

ID

Drain current (continuous) at Tcase = 25 °C

11(1)

A

Drain current (continuous) at Tcase = 100 °C

7(1)

IDM(2)

Drain current (pulsed)

44(1)

A

PTOT

Total dissipation at Tcase = 25 °C

25

W

dv/dt (3)

Peak diode recovery voltage slope

40

V/ns

dv/dt(4)

MOSFET dv/dt ruggedness

50

VISO

Insulation withstand voltage (RMS) from all three leads to external

heat sink (t = 1 s; TC = 25 °C)

2500

V

Tstg

Storage temperature range

-55 to 150

°C

Tj

Operating junction temperature range

Notes:

(1)Limited by maximum junction temperature

(2)Pulse width limited by safe operating area.

(3)ISD ≤ 11 A, di/dt ≤ 900 A/μs; VDS peak < V(BR)DSS, VDD=400 V.

(4) VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

5

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax)

2.5

A

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

340

mJ

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STF13N60DM2 Datasheet(PDF) 3 Page - STMicroelectronics

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