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STGD6M65DF2 Datasheet(PDF) 4 Page - STMicroelectronics |
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STGD6M65DF2 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 20 page Electrical characteristics STGD6M65DF2 4/20 DocID028703 Rev 3 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 250 µA 650 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 6 A 1.55 2.0 V VGE = 15 V, IC = 6 A, TJ = 125 °C 1.9 VGE = 15 V, IC = 6 A, TJ = 175 °C 2.1 VF Forward on-voltage IF = 6 A 2.2 V IF = 6 A, TJ = 125 °C 2.0 IF = 6 A, TJ = 175 °C 1.9 VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA 5 6 7 V ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V ±250 µA Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V - 530 - pF Coes Output capacitance - 31 - Cres Reverse transfer capacitance - 11 - Qg Total gate charge VCC = 520 V, IC = 6 A, VGE = 15 V (see Figure 30: " Gate charge test circuit") - 21.2 - nC Qge Gate-emitter charge - 5.2 - Qgc Gate-collector charge - 8.8 - |
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