SQV120N10-3m8-GE3 datasheet(4/10 Pages) VISHAY

Part #	SQV120N10-3m8-GE3

Description	Automotive P-Channel 60 V (D-S) 175 MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQM120P06-07L

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Vishay Siliconix

S12-1847-Rev. B, 30-Jul-12

4

Document Number: 67026

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Source Drain Diode Forward Voltage

Threshold Voltage

Drain Source Breakdown vs. Junction Temperature

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

175

ID =30A

VGS =10V

T

J - Junction Temperature (°C)

0

0.01

0.02

0.03

0.04

0.05

0

2468

10

V

GS - Gate-to-Source Voltage (V)

TJ =25 °C

TJ = 150 °C

0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

V

SD - Source-to-Drain Voltage (V)

TJ = 25 °C

TJ = 150 °C

- 0.6

- 0.3

0

0.3

0.6

0.9

1.2

- 50

- 25

0

25

50

75

100

125

150

175

ID =5mA

ID = 250 μA

T

J - Temperature (°C)

- 50

- 25

0

25

50

75

100

125

150

175

TJ - Junction Temperature (°C)

ID =10mA

- 80

- 76

- 72

- 68

- 64

- 60

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SQV120N10-3m8-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix

SQV120N10-3m8-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix

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