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MLX80020 Datasheet(PDF) 7 Page - Melexis Microelectronic Systems |
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MLX80020 Datasheet(HTML) 7 Page - Melexis Microelectronic Systems |
7 / 26 page MLX80020 Enhanced LIN Transceiver MLX80020 – Datasheet Page 7 of 26 3901080020 November 2015 Rev 006 Parameter Symbol Condition Min Max Unit Maximum latch - up free current at any Pin ILATCH -500 500 mA Thermal impedance JA in free air 152 K/W Storage temperature Tstg -55 150 °C Junction temperature Tvj -40 150 °C [1] ISO 7637/2 test pulses are applied to VS via a reverse polarity diode and >2uF blocking capacitor. [2] ISO 7637/3 test pulses are applied to LIN via a coupling capacitance of 100nF. [3] ISO 7637/3 test pulses are applied to LIN via a coupling capacitance of 1nF. ISO 7637/2 test pulses are applied to VS via a reverse polarity diode and >10uF blocking capacitor 3.3 Static Characteristics Unless otherwise specified all values in the following tables are valid for VS = 5 to 27V and TJ= -40 to 150°C. Typical values are valid for VS = 12V and TAMB= 25°C. All voltages are referenced to ground (GND), positive currents are flow into the IC. Parameter Symbol Condition Min Typ Max Unit PIN VS Power on reset VS_POR 2.4 4.8 V Power on reset hysteresis VS_POR_hys 0.1 0.3 0.7 V Undervoltage lockout VS_UV 4.2 4.9 V Undervoltage lockout hysteresis VS_UV_hys 0.1 0.3 0.7 V Supply current, sleep mode ISsl VEN = 0V, VWAKE = VS = VLIN <14V 3 9 20 µA Supply current standby mode ISBY VEN = 0V, after POR or WU 300 800 2000 µA Supply current normal mode, dominant ISd VEN = 5V, VTxD = 0V 1 3 5 mA Supply current normal mode, recessive ISr VEN = 5V, VTxD = 5V 300 800 2000 µA PIN LIN – Transmitter Short circuit bus current IBUS_LIM VLIN = VS, VEN = 5V,VTxD = 0V 40 200 mA Pull up resistance bus, normal & standby mode RSLAVE 20 60 kΏ Pull up current bus, sleep mode IBUS_SLEEP VLIN = 0, VS = 12V, VEN = 5V, VTxD = 5V -100 -20 µA Input Leakage current at the receiver incl. pull-up resistor IBUS_PAS_dom VLIN =0V ,VS =12V, VEN = 5V, VTxD = 5V -600 µA Bus reverse current, recessive IBUS_PAS_rec V LIN =18V, VS =5V, VEN = 5V, VTxD = 5V, Tamb<125°C 20 µA Bus reverse current loss of battery [2] IBUS_NO_BAT VS = 0V, 0V < VLIN < 18V Tamb<125°C 20 µA Bus current during loss of ground [2] IBUS_NO_GND VS = 12V, 0 < VLIN < 18V -100 20 µA Transmitter dominant voltage [2] VolBUS Rload = 500 0 0.2 VS V |
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