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RD3L08CGN Datasheet(PDF) 1 Page - Rohm |
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RD3L08CGN Datasheet(HTML) 1 Page - Rohm |
1 / 14 page RD3L08CGN Nch 60V 80A Power MOSFET Datasheet l lOutline VDSS 60V RDS(on)(Max.) 7.0mΩ ID ±80A TO-252 PD 96W l lFeatures l lInner circuit 1) Low on - resistance 2) High power small mold package 3) Pb-free lead plating ; RoHS compliant 4) 100% Rg and UIS tested 5) Halogen free l lApplication l lPackaging specifications Switching Type Packing Embossed Tape Power tool Basic ordering unit (pcs) 2500 Taping code TL Marking RD3L08CGN l lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 60 V Continuous drain current VGS = 10V ID*1 ±80 A Pulsed drain current IDP*2 ±160 A Gate - Source voltage VGSS ±20 V Avalanche current, single pulse IAS*3 37 A Avalanche energy, single pulse EAS*3 52 mJ Power dissipation PD*1 96 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/11 20160725 - Rev.002 |
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