2SC5716 datasheet(4/5 Pages) TOSHIBA | TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

Part Name

Description

2SC5716

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type ( 5 Page)

TOSHIBA

4 page

2SC5716

2001-11-27

Collector-emitter voltage VCE (V)

Safe Operating Area

Case temperature Tc (°C)

PC – Tc

rth (j-c) – tw

Pulse width tw (s)

100

125

150

175

Infinite heat sink

= 25°C (infinite heat sink)

Curves should be applied in thermal limited area.

(single nonrepetitive pulse)

0.001

0.01

0.1

100

1 m

10 m

100 m

100

1000

100

0.01

100

1000

0.1

IC max

(continuous)

1 ms*

IC max (pulsed)

10 ms*

100 ms*

100

ms*

DC operation

= 25°C

VCEO

max

*: Single nonrepetitive pulse

= 25°C

Curves must be derated linearly with

increase in temperature.

1 2 3 4 5

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