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NLX2G04BMX1TCG Datasheet(PDF) 4 Page - ON Semiconductor |
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NLX2G04BMX1TCG Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 9 page NLX2G04 www.onsemi.com 4 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS) Symbol Parameter VCC (V) Test Condition TA = 255C TA = −555C to +125 5C Unit Min Typ Max Min Max tPLH, tPHL Propagation Delay, Input A to Output Y 1.65 RL = 1 MW, CL = 15 pF 1.8 2.3 9.2 1.8 11 ns 1.8 RL = 1 MW, CL = 15 pF 1.8 4.4 7.6 1.2 8.4 2.3−2.7 RL = 1 MW, CL = 15 pF 1.2 3.0 5.1 1.2 5.6 3.0−3.6 RL = 1 MW, CL = 15 pF 0.8 2.2 3.4 0.8 3.8 RL = 500 W, CL = 50 pF 1.2 2.9 4.5 1.2 5.0 4.5−5.5 RL = 1 MW, CL = 15 pF 0.5 1.8 2.8 0.5 3.1 RL = 500 W, CL = 50 pF 0.8 2.3 3.6 0.8 4.0 CIN Input Capacitance 5.5 VIN = 0 V or VCC 2.5 pF CPD Power Dissipation Capacitance (Note 3) 3.3 5.5 10 MHz VIN = 0 V or VCC 9 11 pF 3. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC. |
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