Electronic Components Datasheet Search |
|
MBR40030CTR Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
|
MBR40030CTR Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 30 V IF(AV) = 400 A Features • High Surge Capability Twin Tower Package • Type 30 V VRRM • Not ESD Sensitive Parameter MBR40030CT(R)L Unit 30 V 21 V MBR40030CT(R)L Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Maximum recurrent peak reverse voltage Maximum RMS voltage Conditions Symbol VRRM VRMS V Low VF Silicon Power Schottky Diode M i DC bl ki lt 30 V -55 to 150 °C -55 to 150 °C Parameter MBR40030CT(R)L Unit 400 A 3000 A 0.58 3 200 Thermal characteristics Maximum thermal resistance, junction - case (per leg) 0.35 °C/W mA V Electrical characteristics, at Tj = 25 °C, unless otherwise specified Conditions Tstg Symbol Operating temperature Storage temperature TC = 100 °C VDC Tj R ΘJC Average forward current (per pkg) Maximum instantaneous forward voltage (per leg) Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 100 °C tp = 8.3 ms, half sine IFSM Peak forward surge current (per leg) IFM = 200 A, Tj = 25 °C Tj = 25 °C IF(AV) VF Maximum DC blocking voltage www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 |
Similar Part No. - MBR40030CTR |
|
Similar Description - MBR40030CTR |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |