8Q1024K8 datasheet(10/15 Pages) AEROFLEX

Part #	8Q1024K8

Description	high-performance 1M byte (8Mbit) CMOS static RAM

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Manufacturer	AEROFLEX [Aeroflex Circuit Technology]

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DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(1 Second Data Retention Test)

Notes:

1. En = VDD - .2V, all other inputs = VDR or VSS.

2. Data retention current (I DDR) Tc = 25

o

C.

3. Not guaranteed or tested.

DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(10 Second Data Retention Test, TC=-40

oC to +125oC)

Notes:

1 . Performed at VDD (min) and VDD (max).

2. En = VSS, all other inputs = VDR or VSS.

3. Not guaranteed or tested.

SYMBOL

PARAMETER

MINIMUM

MAXIMUM

UNIT

VDR

VDD for data retention

2.0

--

V

IDDR

1,2

Data retention current (per byte)

--

4.0

mA

tEFR

1,3

Chip select to data retention time

0

ns

t

R

1,3

Operation recovery time

tAVAV

ns

SYMBOL

PARAMETER

MINIMUM

MAXIMUM

UNIT

V

DD

1

VDD for data retention

3.0

3.6

V

t

EFR

2, 3

Chip select to data retention time

0

ns

tR

2, 3

Operation recovery time

t

AVAV

ns

V

DD

DATA RETENTION MODE

tR

50%

VDR > 2.0V

Figure 7. Low V

DD Data Retention Waveform

tEFR

En

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