Features

• High Surge Capability

DO-4 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

MBR3545(R)

MBR3560(R)

Unit

Repetitive peak reverse voltage

45

60

V

RMS reverse voltage

32

42

V

DC blocking voltage

45

60

V

Conditions

100

70

100

80

MBR3545 thru MBR35100R

MBR35100(R)

80

57

MBR3580(R)

Silicon Power

Schottky Diode

2. Reverse polarity (R): Stud is anode.

DC blocking voltage

45

60

V

Continuous forward current

35

35

A

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MBR3545(R)

MBR3560(R)

Unit

Diode forward voltage

0.68

0.75

1.5

1.5

25

25

Thermal characteristics

Thermal resistance, junction -

case

1.5

1.5

°C/W

V

-55 to 150

-55 to 150

100

80

600

-55 to 150

MBR35100(R)

1.5

1.5

MBR3580(R)

1.5

1.5

0.84

0.84

25

mA

600

Conditions

600

600

-55 to 150

35

35

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Surge non-repetitive forward

current, Half Sine Wave

Reverse current

25

A

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