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2N4351 Datasheet(PDF) 1 Page - Calogic, LLC |
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2N4351 Datasheet(HTML) 1 Page - Calogic, LLC |
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1 / 1 page N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 2N4351 FEATURES •• Low ON Resistance •• Low Capacitance •• High Gain •• High Gate Breakdown Voltage •• Low Threshold Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise noted) Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . ±125V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Storage Temperature Range . . . . . . . . . . . . . -65 oC to +200oC Operating Temperature Range . . . . . . . . . . . -55 oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300 oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . 3mW/oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION Part Package Temperature Range 2N4351 Hermetic TO-72 -55 oC to +150oC X2N4351 Sorted Chips in Carriers -55 oC to +150oC LLC PIN CONFIGURATION TO-72 G D C S ELECTRICAL CHARACTERISTICS (TA = 25 oC unless otherwise specified) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS BVDSS Drain-Source Breakdown Voltage 25 V ID = 10 µA, VGS = 0 IGSS Gate Leakage Current 10 pA VGS = ±30V, VDS = 0 IDSS Zero-Gate-Voltage Drain Current 10 nA VDS = 10V, VGS = 0 VGS(th) Gate-Source Threshold Voltage 1 5 V VDS = 10V, ID = 10 µA ID(on) "ON" Drain Current 3 mA VGS = 10V, VDS = 10V VDS(on) Drain-Source "ON" Voltage 1 V ID = 2mA, VGS = 10V rDS(on) Drain-Source Resistance 300 ohms VGS = 10V, ID = 0, f = 1kHz | yfs | Forward Transfer Admittance 1000 µSVDS = 10V, ID = 2mA, f = 1kHz Crss Reverse Transfer Capacitance (Note 2) 1.3 pF VDS = 0, VGS = 0, f = 1MHz Ciss Input Capacitance (Note 2) 5.0 VDS = 10V, VGS = 0, f = 1MHz Cd(sub) Drain-Substrate Capacitance (Note 2) 5.0 VD(SUB) = 10V, f = 1MHz td(on) Turn-On Delay (Note 2) 45 ns tr Rise Time (Note 2) 65 td(off) Turn-Off Delay (Note 2) 60 tf Fall Time (Note 2) 100 NOTES: 1. Device must not be tested at ±125V more than once or longer than 300ms. 2. For design reference only, not 100% tested. 1003 CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539 510-656-2900 PHONE, 510-651-1076 FAX DS002 REV A |
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