N-Channel Enhancement Mode

MOSFET General Purpose

Amplifier/Switch

2N4351

FEATURES

ABSOLUTE MAXIMUM RATINGS

Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V

Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . .

±125V

Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA

Storage Temperature Range . . . . . . . . . . . . . -65

Operating Temperature Range . . . . . . . . . . . -55

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW

Derate above 25

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

Part

Package

Temperature Range

2N4351

Hermetic TO-72

-55

X2N4351

Sorted Chips in Carriers

-55

LLC

PIN CONFIGURATION

TO-72

G

D

C

S

SYMBOL

PARAMETER

MIN

MAX

UNITS

TEST CONDITIONS

Drain-Source Breakdown Voltage

25

V

Gate Leakage Current

10

pA

Zero-Gate-Voltage Drain Current

10

nA

Gate-Source Threshold Voltage

1

5

V

µA

"ON" Drain Current

3

mA

Drain-Source "ON" Voltage

1

V

Drain-Source Resistance

300

ohms

Forward Transfer Admittance

1000

Reverse Transfer Capacitance (Note 2)

1.3

pF

Input Capacitance (Note 2)

5.0

Drain-Substrate Capacitance (Note 2)

5.0

Turn-On Delay (Note 2)

45

ns

Rise Time (Note 2)

65

Turn-Off Delay (Note 2)

60

Fall Time (Note 2)

100

NOTES: 1. Device must not be tested at

±125V more than once or longer than 300ms.

2. For design reference only, not 100% tested.

1003

CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539 510-656-2900 PHONE, 510-651-1076 FAX

DS002 REV A