MBR200100CTR datasheet(1/3 Pages) GENESIC

Part #	MBR200100CTR

Description	High Surge Capability

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Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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VRRM = 45 V - 100 V

IF(AV) = 200 A

Features

• High Surge Capability

Twin Tower Package

• Not ESD Sensitive

Parameter

Symbol

MBR20045CT(R) MBR20060CT(R)

Unit

Repetitive peak reverse

voltage

VRRM

45

60

V

RMS reverse voltage

VRMS

32

42

V

• Types from 45 V to 100 V VRRM

Conditions

100

70

MBR20045CT thru MBR200100CTR

MBR200100CT(R)

80

57

MBR20080CT(R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Silicon Power

Schottky Diode

DC blocking voltage

VDC

45

60

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBR20045CT(R) MBR20060CT(R)

Unit

Average forward current

(per pkg)

IF(AV)

200

A

Maximum forward

voltage (per leg)

0.70

0.75

11

10

30

Thermal characteristics

Thermal resistance,

junction-case, per leg

R

ΘJC

0.45

°C/W

Tj = 100 °C

10

TC = 125 °C

200

Peak forward surge

current (per leg)

IFSM

tp = 8.3 ms, half sine

1500

V

-55 to 150

100

80

A

-55 to 150

MBR200100CT(R)

11

MBR20080CT(R)

0.45

Tj = 150 °C

0.45

0.84

30

mA

Tj = 25 °C

IFM = 100 A, Tj = 25 °C

Conditions

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Reverse current at rated

DC blocking voltage

(per leg)

IR

VF

30

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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