MBR600200CTR datasheet(1/3 Pages) GENESIC

Part #	MBR600200CTR

Description	High Surge Capability

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Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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VRRM = 150 V - 200 V

IF(AV) = 600 A

Features

• High Surge Capability

Twin Tower Package

• Not ESD Sensitive

Parameter

Symbol

MBR600150CT (R)

Unit

Repetitive peak reverse

voltage

VRRM

150

V

RMS reverse voltage

VRMS

106

V

• Types from 150 V to 200 V VRRM

MBR600150CT thru MBR600200CTR

200

141

MBR600200CT (R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Silicon Power

Schottky Diode

Conditions

DC blocking voltage

VDC

150

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBR600150CT (R)

Unit

Average forward current

(per pkg)

IF(AV)

600

A

Maximum forward voltage

(per leg)

0.88

3

10

50

Thermal characteristics

Thermal resistance,

junction-case (per leg)

R

ΘJC

0.28

°C/W

TC = 125 °C

600

Peak forward surge

current (per leg)

IFSM

tp = 8.3 ms, half sine

4000

50

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Reverse current at rated

DC blocking voltage (per

leg)

IR

VF

V

A

Tj = 100 °C

10

Tj = 25 °C

IFM = 300 A, Tj = 25 °C

Conditions

-55 to 150

3

MBR600200CT (R)

0.28

Tj = 150 °C

0.92

mA

-55 to 150

200

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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