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MMDT3904 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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MMDT3904 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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1 / 4 page  JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT3904 FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.2 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.05 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.05 μA hFE(1) VCE=1V,IC=0.1mA 40 hFE(2) VCE=1V,IC=1mA 70 hFE(3) VCE=1V,IC=10mA 100 300 hFE(4) VCE=1V,IC=50mA 60 DC current gain hFE(5) VCE=1V,IC=100mA 30 VCE(sat)1 IC=10mA,IB=1mA 0.2 V Collector-emitter saturation voltage VCE(sat)2 IC=50mA,IB=5mA 0.3 V VBE(sat)1 IC=10mA,IB=1mA 0.65 0.85 V Base-emitter saturation voltage VBE(sat)2 IC=50mA,IB=5mA 0.95 V Transition frequency fT VCE=20V,IC=10mA,f=100MHz 300 MHz Collector output capacitance Cob VCB=5V,IE=0,f=1MHz 4 pF Noise figure NF VCE=5V,Ic=0.1mA,f=1kHz,RS=1KΩ 5 dB Delay time td 35 nS Rise time tr VCC=3V, VBE(off)=-0.5V IC=10mA , IB1=-IB2= 1mA 35 nS Storage time ts 200 nS Fall time tf VCC=3V, IC=10mA IB1=-IB2=1mA 50 nS ℃ ℃ Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.05 μA SOT-363 JC T DUAL TRANSISTOR (NPN+NPN) www.cj-elec.com 1 A,Jun,2014 www.cj-elec.com D,Mar,2016 |
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