0

2

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6

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20

0

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D007

0

5

10

15

20

25

30

35

40

45

50

0

1

2

3

4

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6

7

8

9

10

D004

1

D

2

D

3

D

4

D

D

5

G

6

S

7

S

8

S

P0093-01

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Design

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD18513Q5A

SLPS623 – NOVEMBER 2016

CSD18513Q5A 40-V N-Channel NexFET™ Power MOSFET

1

1 Features

1

•

•

Low-Thermal Resistance

•

Avalanche Rated

•

Logic Level

•

Lead-Free Terminal Plating

•

RoHS Compliant

•

Halogen Free

•

SON 5-mm × 6-mm Plastic Package

2 Applications

•

DC-DC Conversion

•

Secondary Side Synchronous Rectifier

•

Battery Motor Control

3 Description

This 40-V, 2.8-mΩ, 5-mm × 6-mm SON NexFET™

power MOSFET is designed to minimize losses in

power conversion applications.

Top View

.

Product Summary

TYPICAL VALUE

UNIT

Drain-to-Source Voltage

40

V

Gate Charge Total (10 V)

47

nC

Gate Charge Gate-to-Drain

9.2

nC

Drain-to-Source On Resistance

4.1

m

Ω

2.8

Threshold Voltage

1.8

V

Device Information(1)

DEVICE

MEDIA

QTY

PACKAGE

SHIP

CSD18513Q5A

13-Inch Reel

2500

SON

5.00-mm × 6.00-mm

Plastic Package

Tape

and

Reel

CSD18513Q5AT

7-Inch Reel

250

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

VALUE

UNIT

Drain-to-Source Voltage

40

V

Gate-to-Source Voltage

±20

V

Continuous Drain Current (Package Limited)

100

A

Continuous Drain Current (Silicon Limited),

124

Continuous Drain Current(1)

22

Pulsed Drain Current(2)

400

A

Power Dissipation(1)

3.1

W

96

Operating Junction,

Storage Temperature

–55 to 150

°C

Avalanche Energy, Single Pulse

106

mJ

thick FR4 PCB.

1%.

Gate Charge