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CSD18513Q5A Datasheet(PDF) 1 Page - Texas Instruments |
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CSD18513Q5A Datasheet(HTML) 1 Page - Texas Instruments |
1 / 13 page VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 D007 TC = 25°C, I D = 19 A TC = 125°C, I D = 19 A Qg - Gate Charge (nC) 0 5 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5 6 7 8 9 10 D004 ID = 19 A, VDS = 20 V 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD18513Q5A SLPS623 – NOVEMBER 2016 CSD18513Q5A 40-V N-Channel NexFET™ Power MOSFET 1 1 Features 1 • Low RDS(ON) • Low-Thermal Resistance • Avalanche Rated • Logic Level • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control 3 Description This 40-V, 2.8-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View . Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 40 V Qg Gate Charge Total (10 V) 47 nC Qgd Gate Charge Gate-to-Drain 9.2 nC RDS(on) Drain-to-Source On Resistance VGS = 4.5 V 4.1 m Ω VGS = 10 V 2.8 VGS(th) Threshold Voltage 1.8 V Device Information(1) DEVICE MEDIA QTY PACKAGE SHIP CSD18513Q5A 13-Inch Reel 2500 SON 5.00-mm × 6.00-mm Plastic Package Tape and Reel CSD18513Q5AT 7-Inch Reel 250 (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 40 V VGS Gate-to-Source Voltage ±20 V ID Continuous Drain Current (Package Limited) 100 A Continuous Drain Current (Silicon Limited), TC = 25°C 124 Continuous Drain Current(1) 22 IDM Pulsed Drain Current(2) 400 A PD Power Dissipation(1) 3.1 W Power Dissipation, TC = 25°C 96 TJ, Tstg Operating Junction, Storage Temperature –55 to 150 °C EAS Avalanche Energy, Single Pulse ID = 46 A, L = 0.1 mH, RG = 25 Ω 106 mJ (1) Typical RθJA = 40°C/W on a 1-in 2, 2-oz Cu pad on a 0.06-in thick FR4 PCB. (2) Max RθJC = 1.3°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. RDS(on) vs VGS Gate Charge |
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