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CSD18511Q5AT Datasheet(PDF) 3 Page - Texas Instruments |
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CSD18511Q5AT Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 13 page  3 CSD18511Q5A www.ti.com SLPS631 – DECEMBER 2016 Product Folder Links: CSD18511Q5A Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 40 V IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 32 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.5 1.8 2.4 V RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V, ID = 24 A 2.7 3.5 m Ω VGS = 10 V, ID = 24 A 1.9 2.3 m Ω gƒs Transconductance VDS = 20 V, ID = 24 A 5.2 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 V, VDS = 20 V, ƒ = 1 MHz 4500 5850 pF Coss Output Capacitance 452 588 pF Crss Reverse Transfer Capacitance 238 309 pF RG Series Gate Resistance 0.7 1.4 Ω Qg Gate Charge Total (10 V) VDS = 20 V, ID = 24 A 63 82 nC Qg Gate Charge Total (4.5 V) 31 41 nC Qgd Gate Charge Gate-to-Drain 11.2 nC Qgs Gate Charge Gate-to-Source 13.2 nC Qg(th) Gate Charge at Vth 8.2 nC Qoss Output Charge VDS = 20 V, VGS = 0 V 20 nC td(on) Turn On Delay Time VDS = 20 V, VGS = 10 V, IDS = 24 A, RG = 0 6 ns tr Rise Time 15 ns td(off) Turn Off Delay Time 24 ns tƒ Fall Time 5 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage IDS = 24 A, VGS = 0 V 0.75 1 V Qrr Reverse Recovery Charge VDS= 20 V, IF = 24 A, di/dt = 300 A/μs 17 nC trr Reverse Recovery Time 14 ns (1) RθJC is determined with the device mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-Case Thermal Resistance(1) 1.2 °C/W RθJA Junction-to-Ambient Thermal Resistance(1)(2) 50 |
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