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MMDT5451 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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MMDT5451 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5451 DUAL TRANSISTOR (NPN+PNP) FEATURES z Epitaxial Planar Die Construction z Ideal for low Power Amplification and Switching z One 5551(NPN), one 5401(PNP) MRKING:KNM MAXIMUM RATINGS NPN 5551 (Ta=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS NPN 5551 (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 6 V Collector cut-off current ICBO VCB=120V,IE=0 0.05 A Emitter cut-off current IEBO VEB=4V,IC=0 0.05 A hFE1 VCE=5V,IC=1mA 80 hFE2 VCE=5V,IC=10mA 100 300 DC current gain hFE3 VCE=5V,IC=50mA 30 IC=10mA, IB=1mA 0.15 V Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.2 V IC=10mA, IB=1mA 1 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 1 V Output Capacitance Cobo VCB = 10V, f = 1.0MHz, IE = 0 6.0 pF Current Gain-Bandwidth Product fT VCE = 10V, IC = 10mA, f = 100MHz 100 300 MHz Noise Figure NF VCE= 5.0V, IC = 200μA, RS = 1.0k f = 1.0kHz 8.0 dB Symbol Parameter Value Units VCBO Collector- Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.2 W R JA Thermal Resistance, Junction to Ambient 625 /W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 627 JCET www.cj-elec.com 1 D,Mar,2016 www.cj-elec.com 1 2 3 6 5 4 |
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