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AO4604 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AO4604
Description  Complementary Enhancement Mode Field Effect Transistor
Download  9 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO4604 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

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background image
AO4
604
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
1
1.9
3
V
ID(ON)
20
A
22.5
28
TJ=125°C
31.3
38
34.5
42
m
gFS
10
15.4
S
VSD
0.76
1
V
IS
3A
Ciss
680
pF
Coss
102
pF
Crss
77
pF
Rg
3
Qg(10V)
13.84
nC
Qg(4.5V)
6.74
nC
Qgs
1.82
nC
Qgd
3.2
nC
tD(on)
4.6
ns
tr
4.1
ns
tD(off)
20.6
ns
tf
5.2
ns
trr
16.5
ns
Qrr
7.8
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
Gate Source Charge
Turn-On DelayTime
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
VGS=10V, VDS=15V, ID=6.9A
Gate Drain Charge
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Forward Transconductance
VDS=5V, ID=6.9A
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=6.9A
m
VGS=4.5V, ID=5.0A
Gate Threshold Voltage
VDS=VGS ID=250µA
On state drain current
VGS=4.5V, VDS=5V
VDS=24V, VGS=0V
µA
Gate-Body leakage current
VDS=0V, VGS=±20V
IF=6.9A, dI/dt=100A/µs
IF=6.9A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted): N-CHANNEL
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.


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