AO7407 datasheet(1/6 Pages) ALPHA

Part #	AO7407

Description	P-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	ALPHA [Alpha Industries]

Direct Link	http://www.alphaind.com

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Symbol

VDS

VGS

IDM

TJ, TSTG

Symbol

Typ

Max

300

360

350

425

RθJL

280

320

Junction and Storage Temperature Range

A

PD

°C

0.35

0.22

-55 to 150

TA=70°C

ID

-1.2

-1.0

-10

Pulsed Drain Current

B

Power Dissipation

A

TA=25°C

Continuous Drain

Current

A

Maximum

Units

Parameter

TA=25°C

TA=70°C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±8

Gate-Source Voltage

Drain-Source Voltage

-20

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

W

Maximum Junction-to-Lead

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

AO7407

P-Channel Enhancement Mode Field Effect Transistor

May 2003

Features

VDS (V) = -20V

ID = -1.2 A

RDS(ON) < 135mΩ (VGS = -4.5V)

RDS(ON) < 170mΩ (VGS = -2.5V)

RDS(ON) < 220mΩ (VGS = -1.8V)

General Description

The AO7407 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications.

S

G

D

SC-70

SOT 323

Top View

G

D

S

Alpha & Omega Semiconductor, Ltd.

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