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AO7407 Datasheet(PDF) 1 Page - Alpha Industries |
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AO7407 Datasheet(HTML) 1 Page - Alpha Industries |
1 / 6 page Symbol VDS VGS IDM TJ, TSTG Symbol Typ Max 300 360 350 425 RθJL 280 320 Junction and Storage Temperature Range A PD °C 0.35 0.22 -55 to 150 TA=70°C ID -1.2 -1.0 -10 Pulsed Drain Current B Power Dissipation A TA=25°C Continuous Drain Current A Maximum Units Parameter TA=25°C TA=70°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V ±8 Gate-Source Voltage Drain-Source Voltage -20 °C/W Maximum Junction-to-Ambient A Steady-State °C/W W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA AO7407 P-Channel Enhancement Mode Field Effect Transistor May 2003 Features VDS (V) = -20V ID = -1.2 A RDS(ON) < 135mΩ (VGS = -4.5V) RDS(ON) < 170mΩ (VGS = -2.5V) RDS(ON) < 220mΩ (VGS = -1.8V) General Description The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S G D SC-70 SOT 323 Top View G D S Alpha & Omega Semiconductor, Ltd. |
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