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EM48AM1684VTH-7 Datasheet(PDF) 1 Page - Eorex Corporation |
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EM48AM1684VTH-7 Datasheet(HTML) 1 Page - Eorex Corporation |
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1 / 17 page  eorex EM48AM1684VTH May. 2013 www.eorex.com 1/17 256Mb (4M ××××4Bank××××16) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 3.3V ±0.3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Programmable CAS Latency (C/L) - 2 or 3 • Data Mask (DQM) for Read / Write Masking • Programmable Wrap Sequence – Sequential (B/L = 1/2/4/8/full Page) – Interleave (B/L = 1/2/4/8) • Burst Read with Single-bit Write Operation • All Inputs are Sampled at the Rising Edge of the System Clock • Auto Refresh and Self Refresh • 8,192 Refresh Cycles / 64ms (7.8us) Description The EM48AM1684VTH is Synchronous Dynamic Random Access Memory (SDRAM) organized as 4Meg words x 4 banks by 16 bits. All inputs and outputs are synchronized with the positive edge of the clock. The 256Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is designed to operate at 3.3V low power memory system. It also provides auto refresh with power saving / down mode. All inputs and outputs voltage levels are compatible with LVTTL. Available packages: TSOPII 54P 400mil. Ordering Information Part No Organization Max. Freq Package Grade Pb EM48AM1684VTH-6 16M X 16 166MHz @CL3 54pin TSOP(ll) Commercial Free EM48AM1684VTH-7 16M X 16 143MHz @CL3 54pin TSOP(ll) Commercial Free EM48AM1684VTH-75 16M X 16 133MHz @CL3 54pin TSOP(ll) Commercial Free EM48AM1684VTH-6E 16M X 16 166MHz @CL3 54pin TSOP(ll) Extended Free EM48AM1684VTH-7E 16M X 16 143MHz @CL3 54pin TSOP(ll) Extended Free EM48AM1684VTH-75E 16M X 16 133MHz @CL3 54pin TSOP(ll) Extended Free |
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