QS3VH257S1G8 datasheet(4/8 Pages) IDT

Part #	QS3VH257S1G8

Description	HIGH BANDWIDTH BUS SWITCH

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Manufacturer	IDT [Integrated Device Technology]

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INDUSTRIAL TEMPERATURE RANGE

IDTQS3VH257

2.5V / 3.3V QUAD 2:1 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH

TYPICAL ICCD vs ENABLE FREQUENCY CURVE AT VCC = 3.3V

ENABLE FREQUENCY (MHz)

NOTES:

1. For conditions shown as Min. or Max., use the appropriate values specified under DC Electrical Characteristics.

2. Per input driven at the specified level. Mux/demux pins do not contribute to

ΔIcc.

3. This parameter is guaranteed but not tested.

4. This parameter represents the current required to switch internal capacitance at the specified frequency. The mux/demux inputs do not contribute to the Dynamic Power Supply Current.

This parameter is guaranteed but not production tested.

POWER SUPPLY CHARACTERISTICS

Symbol

Parameter

Test Conditions(1)

Min.

Typ.

Max.

Unit

ICCQ

Quiescent Power Supply Current

VCC = Max., VIN = GND or VCC, f = 0

—

2

4

mA

ΔICC

Power Supply Current (2,3) per Input HIGH

VCC = Max., VIN = 3V, f = 0 per Control Input

—

30

μA

ICCD

Dynamic Power Supply Current(4)

VCC = 3.3V, A and B Pins Open, Control Inputs

See Typical ICCD vs Enable Frequency graph below

Toggling @ 50% Duty Cycle

0

2

4

6

8

0

2468

10

12

14

16

18

20

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