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K1S161611A Datasheet(PDF) 7 Page - Samsung semiconductor

Part # K1S161611A
Description  1Mx16 bit Uni-Transistor Random Access Memory
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K1S161611A Datasheet(HTML) 7 Page - Samsung semiconductor

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Revision 0.1
November 2003
K1S161611A
- 7 -
UtRAM
Preliminary
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, UB or/and LB=VIL)
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Data Valid
High-Z
tRC
CS1
Address
UB, LB
OE
Data out
tAA
tRC
tOH
tOH
tAA
tCO
tBA
tOE
tOLZ
tBLZ
tLZ
tOHZ
tBHZ
tHZ
NOTES (READ CYCLE)
1.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
3. tOE(max) is met only when
OE becomes enabled after tAA(max).
4. If invalid address signals shorter than min. tRC are continuously repeated for over 4us, the device needs a normal read timing(tRC) or
needs to sustain standby state for min. tRC at least once in every 4us.
CS2


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