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K1S161611A Datasheet(PDF) 7 Page - Samsung semiconductor |
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K1S161611A Datasheet(HTML) 7 Page - Samsung semiconductor |
7 / 10 page Revision 0.1 November 2003 K1S161611A - 7 - UtRAM Preliminary Address Data Out Previous Data Valid Data Valid TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, UB or/and LB=VIL) TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) Data Valid High-Z tRC CS1 Address UB, LB OE Data out tAA tRC tOH tOH tAA tCO tBA tOE tOLZ tBLZ tLZ tOHZ tBHZ tHZ NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 3. tOE(max) is met only when OE becomes enabled after tAA(max). 4. If invalid address signals shorter than min. tRC are continuously repeated for over 4us, the device needs a normal read timing(tRC) or needs to sustain standby state for min. tRC at least once in every 4us. CS2 |
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Similar Description - K1S161611A |
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