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S1T8515A01 Datasheet(PDF) 4 Page - Samsung semiconductor |
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S1T8515A01 Datasheet(HTML) 4 Page - Samsung semiconductor |
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4 / 6 page  S1T8515A FM IF RECEIVER FOR FLEX PAGER 4 ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (VCC = 1.4V ±5%, fIN (2MIX) = 21.4MHz, fDEV = ±4.8kHz, fMOD = 800Hz, Ta = 25°C, FIL_VAR = “H”, unless otherwise specified) Characteristic Symbol Value Unit Supply Voltage VCC (MAX) 4 V Power Dissipation PD 760 mW Operating Temperature TOPR −20 — +70 °C Storage Temperature TSTG −55 — +125 °C Characteristic Symbol Test Conditions Min. Typ. Max. Unit Operating current ICCN No Input Signal − 1.5 1.75 mA ICCS Battery Saving − 0 10 µA Alarm detection voltage VAD − 1.0 1.05 1.1 V Alarm low level output voltage VO (AL) I = 100 µA − − 0.4 V Alarm high level leakage current ILKG (AL) − − − 2 µA FSK low level output voltage VL (FSK) I = 100 µA − − 0.4 V FSK high level leakage current ILKG (FSK) − − − 2 µA Regulator output voltage VOREG − 0.95 1.0 1.05 V Quick charge current IC − 50 70 − µA Input for −3dB sensitivity VLIM Mixer Input − 2.5 7.5 µVrms Recovered audio output voltage VO (RAO) VIN (2MIX) = 500µVrms 36 54 78 mVrms Mixer conversion gain ∆G V (M) Ceramic Filter loss = −1dB 8 12 16 dB Signal to noise ratio S/N VIN (MIX1N) = 500µVrms 38 55 − dB Total Harmonic Distortion THD VIN (MIX1N) = 500µVrms − 2.0 3.5 % Mixer 3rd order intercept point 3RD − − −10 − dBm Mixer input resistance RI (MIX) − 3.5 5 6.5 k Ω Limiting amp input resistance RI (LA) − 0.9 1.5 2.1 k Ω AM rejection ratio AMR VIN (2MIX) = 500µVrms (AM = 300%) 25 40 − dB Data shaping output duty DR VIN (2MIX) = 500µVrms 40 50 60 % RSSI output voltage VRSSI VIN (2MIX) = 1mVrms 0.49 0.7 0.91 V RSSI output resistance RRSSI − 90 100 110 k Ω |
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