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MC74VHC1G86 Datasheet(PDF) 3 Page - ON Semiconductor |
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MC74VHC1G86 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page MC74VHC1G86 http://onsemi.com 3 DC ELECTRICAL CHARACTERISTICS VCC TA = 255C TA v 855C *555C to 1255C Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit VIH Minimum High−Level Input Voltage 2.0 3.0 4.5 5.5 1.5 2.1 3.15 3.85 1.5 2.1 3.15 3.85 1.5 2.1 3.15 3.85 V VIL Maximum Low−Level Input Voltage 2.0 3.0 4.5 5.5 0.5 0.9 1.35 1.65 0.5 0.9 1.35 1.65 0.5 0.9 1.35 1.65 V VOH Minimum High−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOH = *50 mA 2.0 3.0 4.5 1.9 2.9 4.4 2.0 3.0 4.5 1.9 2.9 4.4 1.9 2.9 4.4 V VIN = VIH or VIL IOH = *4 mA IOH = *8 mA 3.0 4.5 2.58 3.94 2.48 3.80 2.34 3.66 VOL Maximum Low−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOL = 50 mA 2.0 3.0 4.5 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V VIN = VIH or VIL IOL = 4 mA IOL = 8 mA 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 $0.1 $1.0 $1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 1.0 10 40 mA AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns Symbol Parameter Test Conditions TA = 25°C TA ≤ 85°C −55 ≤ TA ≤ 125°C Unit Min Typ Max Min Max Min Max tPLH, tPHL Maximum Propagation Delay, Input A or B to Y VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF 4.4 5.7 11.0 14.5 13.0 16.5 15.5 19.5 ns VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 3.5 4.2 6.8 8.8 8.0 10.0 10.0 12.0 CIN Maximum Input Capacitance 5.5 10 10 10 pF CPD Power Dissipation Capacitance (Note 6) Typical @ 25°C, VCC = 5.0 V pF 10 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. |
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