MC74HC03A

http://onsemi.com

2

MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

DC Supply Voltage (Referenced to GND)

– 0.5 to + 7.0

V

DC Input Voltage (Referenced to GND)

V

DC Output Voltage (Referenced to GND)

V

DC Input Current, per Pin

± 20

mA

DC Output Current, per Pin

± 25

mA

± 50

mA

Power Dissipation in Still Air

500

450

mW

Storage Temperature

–65 to + 150

°C

Lead Temperature, 1 mm from Case for 10 Seconds

SOIC or TSSOP Package

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress

ratings only. Functional operation above the Recommended Operating Conditions is not implied.

Extended exposure to stresses above the Recommended Operating Conditions may affect device

reliability.

†Derating − SOIC Package: – 7 mW/°C from 65° to 125°C

TSSOP Package: − 6.1 mW/°C from 65° to 125°C

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

DC Supply Voltage (Referenced to GND)

2.0

6.0

V

0

V

Operating Temperature, All Package Types

–55

+125

°C

Input Rise and Fall Time

(Figure 1)

0

0

0

1000

500

400

ns

DESIGN GUIDE

Criteria

Value

Unit

Internal Gate Count*

7.0

ea

Internal Gate Propagation Delay

1.5

ns

Internal Gate Power Dissipation

5.0

mW

Speed Power Product

0.0075

pJ

*Equivalent to a two−input NAND gate

This device contains protection

circuitry to guard against damage

due to high static voltages or electric

fields. However, precautions must

be taken to avoid applications of any

voltage higher than maximum rated

voltages to this high−impedance cir-

Unused inputs must always be

tied to an appropriate logic voltage

Unused outputs must be left open.