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TLV2316QDGKRQ1 Datasheet(PDF) 6 Page - Texas Instruments |
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TLV2316QDGKRQ1 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 31 page 6 TLV316-Q1, TLV2316-Q1, TLV4316-Q1 SBOS845A – NOVEMBER 2016 – REVISED DECEMBER 2016 www.ti.com Product Folder Links: TLV316-Q1 TLV2316-Q1 TLV4316-Q1 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Input pins are diode-clamped to the power-supply rails. Current limit input signals that can swing more than 0.5 V beyond the supply rails to 10 mA or less. (3) Short-circuit to ground, one amplifier per package. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature (unless otherwise noted) (1) MIN MAX UNIT Supply voltage 7 V Signal input pins Voltage(2) Common-mode (V–) – 0.5 (V+) + 0.5 V Differential (V+) – (V–) + 0.2 Current(2) –10 10 mA Output short-circuit(3) Continuous mA Temperature Specified, TA –40 125 °C Junction, TJ 150 Storage, Tstg –65 150 (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±4000 V Charged-device model (CDM), per AEC Q100-011 ±750 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VS Supply voltage 1.8 5.5 V Specified temperature range –40 125 °C |
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