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MCP6V64 Datasheet(PDF) 5 Page - Microchip Technology

Part # MCP6V64
Description  Portable Instrumentation
Download  46 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP6V64 Datasheet(HTML) 5 Page - Microchip Technology

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 2014-2015 Microchip Technology Inc.
DS20005367B-page 5
MCP6V61/1U/2/4
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND,
VCM =VDD/3, VOUT =VDD/2, VL =VDD/2, RL =20kΩ to VL and CL = 30 pF (refer to Figures 1-4 and 1-5).
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Amplifier AC Response
Gain Bandwidth Product
GBWP
1
MHz
Slew Rate
SR
0.45
V/µs
Phase Margin
PM
60
°C
G = +1
Amplifier Noise Response
Input Noise Voltage
Eni
—0.17
µVP-P f=0.01 Hz to 1 Hz
Eni
—0.54
µVP-P f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—26
nV/√Hz f < 2 kHz
Input Noise Current Density
ini
—5
fA/√Hz
Amplifier Distortion (Note 1)
Intermodulation Distortion (AC)
IMD
48
µVPK VCM tone = 50 mVPK at 1 kHz,
GN =11, RTI
Amplifier Step Response
Start-Up Time
tSTR
250
µs
G = +1, 0.1% VOUT settling (Note 2)
Offset Correction Settling Time
tSTL
—30
µs
G = +1, VIN step of 2V,
VOS within 100 µV of its final value
Output Overdrive Recovery Time
tODR
60
µs
G = -10, ±0.5V input overdrive to VDD/2,
VIN 50% point to VOUT 90% point (Note 3)
EMI Protection
EMI Rejection Ratio
EMIRR
80
dB
VIN =0.1 VPK, f = 400 MHz
—96
VIN =0.1 VPK, f = 900 MHz
—101
VIN =0.1 VPK, f = 1800 MHz
—102
VIN =0.1 VPK, f = 2400 MHz
Note 1:
These parameters were characterized using the circuit in Figure 1-6. In Figures 2-40 and 2-41, there is an
IMD tone at DC, a residual tone at 1 kHz and other IMD tones and clock tones. IMD is Referred to
Input (RTI).
2:
High gains behave differently; see Section 4.3.3 “Offset at Power-Up”.
3:
tSTL and tODR include some uncertainty due to clock edge timing.
TABLE 1-3:
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, all limits are specified for: VDD = +1.8V to +5.5V, VSS =GND
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-40
+125
°C
Operating Temperature Range
TA
-40
+125
°C
Note 1
Storage Temperature Range
TA
-65
+150
°C
Thermal Package Resistances
Thermal Resistance, 5LD-SC70
JA
—209
°C/W
Thermal Resistance, 5LD-SOT-23
JA
—201
°C/W
Thermal Resistance, 8L-2x3 TDFN
JA
—53
°C/W
Thermal Resistance, 8L-MSOP
JA
—211
°C/W
Thermal Resistance, 14L-TSSOP
JA
—100
°C/W
Note 1:
Operation must not cause TJ to exceed the Maximum Junction Temperature specification (+150°C).


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