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FCPF11N60 Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # FCPF11N60
Description  SuperFET
Download  10 Pages
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FCPF11N60 Datasheet(HTML) 3 Page - Fairchild Semiconductor

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©2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom :
5.5 V
* Notes :
1. 250
µs Pulse Test
2. T
C
= 25
oC
V
DS
, Drain-Source Voltage [V]
246
8
10
10
-1
10
0
10
1
* Note
1. V
DS
= 40V
2. 250
µs Pulse Test
-55
oC
150
oC
25
oC
V
GS
, Gate-Source Voltage [V]
0
5
10
15
20
25
30
35
40
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25
oC
I
D
, Drain Current [A]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
* Note : I
D
= 11A
Q
G
, Total Gate Charge [nC]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
25
oC
150
oC
* Notes :
1. V
GS
= 0V
2. 250
µs Pulse Test
V
SD
, Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature


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