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72V2101L10PFG8 Datasheet(PDF) 1 Page - Integrated Device Technology

Part # 72V2101L10PFG8
Description  3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

72V2101L10PFG8 Datasheet(HTML) 1 Page - Integrated Device Technology

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JULY 2014
3.3 VOLT HIGH DENSITY CMOS
SUPERSYNC FIFO™
262,144 x 9
524,288 x 9
IDT72V2101
IDT72V2111
DSC-4669/5
IDT and the IDT logo are trademarks of Integrated Device Technology, Inc. The SuperSync FIFO is a trademark of Integrated Device Technology, Inc.
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
1
© 2014 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.
FEATURES:
••••• Choose among the following memory organizations:
IDT72V2101
262,144 x 9
IDT72V2111
524,288 x 9
Pin-compatible with the IDT72V261/72V271 and the IDT72V281/
72V291 SuperSync FIFOs
10ns read/write cycle time (6.5ns access time)
Fixed, low first word data latency time
5V input tolerant
Auto power down minimizes standby power consumption
Master Reset clears entire FIFO
Partial Reset clears data, but retains programmable settings
Retransmit operation with fixed, low first word data latency time
Empty, Full and Half-Full flags signal FIFO status
Programmable Almost-Empty and Almost-Full flags, each flag can
default to one of two preselected offsets
Program partial flags by either serial or parallel means
Select IDT Standard timing (using EFand FFflags) or First Word Fall
Through timing (using OR and IR flags)
Output enable puts data outputs into high impedance state
Easily expandable in depth and width
Independent Read and Write clocks (permit reading and writing
simultaneously)
Available in the 64-pin Thin Quad Flat Pack (TQFP)
High-performance submicron CMOS technology
••••• Industrial temperature range (–40°C to +85°C) is available
••••• Green parts available, see ordering information
DESCRIPTION:
The IDT72V2101/72V2111 are exceptionally deep, high speed, CMOS
First-In-First-Out(FIFO)memorieswithclockedreadandwritecontrols. These
FIFOs offer numerous improvements over previous SuperSync FIFOs,
includingthefollowing:
• Thelimitationofthefrequencyofoneclockinputwithrespecttotheotherhas
been removed. The Frequency Select pin (FS) has been removed, thus
it is no longer necessary to select which of the two clock inputs, RCLK or
WCLK, is running at the higher frequency.
• The period required by the retransmit operation is now fixed and short.
• Thefirstworddatalatencyperiod,fromthetimethefirstwordiswrittentoan
emptyFIFOtothetimeitcanberead,isnowfixedandshort. (Thevariable
clock cycle counting delay associated with the latency period found on
previousSuperSyncdeviceshasbeeneliminatedonthisSuperSyncfamily.)
SuperSyncFIFOsareparticularlyappropriatefornetwork,video,telecommu-
nications,datacommunicationsandotherapplicationsthatneedtobufferlarge
amountsofdata.
FUNCTIONAL BLOCK DIAGRAM
INPUT REGISTER
OUTPUT REGISTER
RAM ARRAY
262,144 x 9
524,288 x 9
FLAG
LOGIC
FF/IR
PAF
EF/OR
PAE
HF
READ POINTER
READ
CONTROL
LOGIC
WRITE CONTROL
LOGIC
WRITE POINTER
RESET
LOGIC
WEN
WCLK
D0 -D8
LD
MRS
REN
RCLK
OE
Q0 -Q8
OFFSET REGISTER
PRS
FWFT/SI
SEN
RT
4669 drw 01


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