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70V06L20PFGI8 Datasheet(PDF) 11 Page - Integrated Device Technology |
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70V06L20PFGI8 Datasheet(HTML) 11 Page - Integrated Device Technology |
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11 / 23 page  6.42 IDT70V06S/L High-Speed 3.3V 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges 11 Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,3,5,8) Timing Waveform of Write Cycle No. 2, CE Controlled Timing(1,3,5,8) NOTES: 1. R/W or CE must be HIGH during all address transitions. 2. A write occurs during the overlap (tEW or tWP) of a LOW CE and a LOW R/W for memory array writing cycle. 3. tWR is measured from the earlier of CE or R/W (or SEM or R/W) going HIGH to the end of write cycle. 4. During this period, the I/O pins are in the output state and input signals must not be applied. 5. If the CE or SEM LOW transition occurs simultaneously with or after the R/W low transition, the outputs remain in the High-impedance state. 6. Timing depends on which enable signal is asserted last, CE, or R/W. 7. Timing depends on which enable signal is de-asserted first, CE, or R/W. 8. If OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. 9. To access SRAM, CE = VIL and SEM = VIH. To access Semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition. R/ W tWC tHZ tAW tWR tAS tWP DATAOUT (2) tWZ tDW tDH tOW OE ADDRESS DATAIN CE or SEM (6) (4) (4) (3) 2942 drw 08 (7) (7) (9) 2942 drw 09 tWC tAS tWR tDW tDH ADDRESS DATAIN CE or SEM R/ W tAW tEW (3) (2) (6) (9) |
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