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71V30S35TFGI Datasheet(PDF) 8 Page - Integrated Device Technology

Part # 71V30S35TFGI
Description  HIGH-SPEED 3.3V 1K X 8 DUAL-PORT STATIC RAM
Download  15 Pages
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

71V30S35TFGI Datasheet(HTML) 8 Page - Integrated Device Technology

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6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts
Industrial and Commercial Temperature Ranges
8
Timing Waveform of Write Cycle No. 2, CE Controlled Timing(1,5)
NOTES:
1. R/W or CE must be HIGH during all address transitions.
2. A write occurs during the overlap (tEW or tWP) of CE = VIL and R/W= VIL.
3. tWR is measured from the earlier of CE or R/W going HIGH to the end of the write cycle.
4. During this period, the l/O pins are in the output state and input signals must not be applied.
5. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal (CE or R/W) is asserted last.
7. This parameter is determined be device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load
(Figure 2).
8. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the
bus for the required tDW. If OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP.
Timing Waveform of Write Cycle No. 1,(R/W Controlled Timing)(1,5,8)
tWC
ADDRESS
OE
CE
R/
W
DATA OUT
DATA IN
tAS
tWR
tOW
tDW
tDH
tAW
tWP
(2)
tHZ
(4)
(4)
tWZ
tHZ
3741 drw 08
(6)
(7)
(7)
(7)
(3)
tWC
ADDRESS
CE
R/
W
DATA IN
tAS
tEW
tWR
tDW
tDH
tAW
3741 drw 09
(6)
(2)
(3)


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