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70V07S35GGI8 Datasheet(PDF) 8 Page - Integrated Device Technology |
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70V07S35GGI8 Datasheet(HTML) 8 Page - Integrated Device Technology |
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8 / 19 page  IDT70V07S/L High-Speed 32K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges 8 Waveform of Read Cycles(5) NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is de-asserted first, CE or OE. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD. 5. SEM = VIH. NOTES: 1. Transition is measured 0mV from Low or High impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 5. 'X' in part number indicates power rating (S or L). AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(5) tRC R/ W CE ADDR tAA OE 2943 drw 08 (4) tACE (4) tAOE (4) (1) tLZ tOH (2) tHZ (3,4) tBDD DATAOUT BUSYOUT VALID DATA (4) Symbol Parameter 70V07X25 Com'l & Ind 70V07X35 Com'l & Ind 70V07X55 Com'l Only Unit Min. Max. Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 25 ____ 35 ____ 55 ____ ns tEW Chip Enable to End-of-Write(3) 20 ____ 30 ____ 45 ____ ns tAW Address Valid to End-of-Write 20 ____ 30 ____ 45 ____ ns tAS Address Set-up Time(3) 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width 20 ____ 25 ____ 40 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 15 ____ 20 ____ 30 ____ ns tHZ Output High-Z Time(1,2) ____ 15 ____ 20 ____ 25 ns tDH Data Hold Time(4) 0 ____ 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 15 ____ 20 ____ 25 ns tOW Output Active from End-of-Write(1,2,4) 0 ____ 0 ____ 0 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ 5 ____ ns 2943 tbl 12 |
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