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70V631S15BFGI Datasheet(PDF) 7 Page - Integrated Device Technology |
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70V631S15BFGI Datasheet(HTML) 7 Page - Integrated Device Technology |
7 / 23 page 7 IDT70V631S High-Speed 3.3V 256K x 18 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges RecommendedOperating Temperature and Supply Voltage(1) Recommended DC Operating Conditions with VDDQ at 2.5V Absolute Maximum Ratings(1) NOTES: 1. VIL > -1.5V for pulse width less than 10 ns. 2. VTERM must not exceed VDDQ + 100mV. 3. To select operation at 2.5V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VIL (0V), and VDDQX for that port must be supplied as indicated above. NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or 4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV. NOTE: 1. This is the parameter TA. This is the "instant on" case temperature. Recommended DC Operating Conditions with VDDQ at 3.3V NOTES: 1. VIL > -1.5V for pulse width less than 10 ns. 2. VTERM must not exceed VDDQ + 150mV. 3. To select operation at 3.3V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VIH (3.3V), and VDDQX for that port must be supplied as indicated above. Grade Ambient Temperature GND VDD Commercial 0OC to +70OC0V 3.3V + 150mV Industrial -40OC to +85OC0V 3.3V + 150mV 5622 tbl 04 Symbol Rating Commercial & Industrial Unit VTERM(2) Terminal Voltage with Respect to GND -0.5 to +4.6 V TBIAS Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -65 to +150 o C IOUT DC Output Current 50 mA 5622 tbl 05 Symbol Parameter Min. Typ. Max. Unit VDD Core Supply Voltage 3.15 3.3 3.45 V VDDQ I/O Supply Voltage(3) 2.4 2.5 2.6 V VSS Ground 0 0 0 V VIH Input High Voltage(3) (Address & Control Inputs) 1.7 ____ VDDQ + 100mV(2) V VIH Input High Voltage - I/O(3) 1.7 ____ VDDQ + 100mV(2) V VIL Input Low Voltage -0.5(1) ____ 0.7 V 5622 tbl 06 Symbol Parameter Min. Typ. Max. Unit VDD Core Supply Voltage 3.15 3.3 3.45 V VDDQ I/O Supply Voltage(3) 3.15 3.3 3.45 V VSS Ground 0 0 0 V VIH Input High Voltage (Address & Control Inputs)(3) 2.0 ____ VDDQ + 150mV(2) V VIH Input High Voltage - I/O(3) 2.0 ____ VDDQ + 150mV(2) V VIL Input Low Voltage -0.3(1) ____ 0.8 V 5622 tbl 07 NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O. Capacitance(1) (TA = +25°C, F = 1.0MHZ) TQFP ONLY Symbol Parameter Conditions(2) Max. Unit CIN Input Capacitance VIN = 3dV 8 pF COUT(3) Output Capacitance VOUT = 3dV 10.5 pF 5622 tbl 08 |
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