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71V321S25PFG8 Datasheet(PDF) 7 Page - Integrated Device Technology

Part # 71V321S25PFG8
Description  HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

71V321S25PFG8 Datasheet(HTML) 7 Page - Integrated Device Technology

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6.42
IDT71V321S/L
High Speed 3.3V 2K x 8 Dual-Port Static RAM with Interrupts
Industrial and Commercial Temperature Ranges
7
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(4)
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
3. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over
voltage and temperature, the actual tDH will always be smaller than the actual tOW.
4. 'X'inpartnumbersindicatespowerrating(SorL).
Symbol
Parameter
71V321X25
Com'l & Ind
71V321X35
Com'l & Ind
71V321X55
Com'l & Ind
Unit
Min.
Max.
Min.
Max.
Min.
Max.
WRITE CYCLE
tWC
Write Cycle Time
25
____
35
____
55
____
ns
tEW
Chip Enable to End-of-Write
20
____
30
____
40
____
ns
tAW
Address Valid to End-of-Write
20
____
30
____
40
____
ns
tAS
Address Set-up Time
0
____
0
____
0
____
ns
tWP
Write Pulse Width
20
____
30
____
40
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
12
____
20
____
20
____
ns
tHZ
Output High-Z Time(1,2)
____
12
____
15
____
30
ns
tDH
Data Hold Time(3)
0
____
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
15
____
15
____
30
ns
tOW
Output Active from End-of-Write(1,2)
0
____
0
____
0
____
ns
3026 tbl 10


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