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70T659S10BFGI8 Datasheet(PDF) 11 Page - Integrated Device Technology |
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70T659S10BFGI8 Datasheet(HTML) 11 Page - Integrated Device Technology |
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11 / 28 page  11 IDT70T651/9S High-Speed 2.5V 256/128K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(4) NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 1). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. To access RAM, CE= VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. CE = VIL when CE0 = VIL and CE1 = VIH. CE = VIH when CE0 = VIH and/or CE1 = VIL. 4. These values are valid regardless of the power supply level selected for I/O and control signals (3.3V/2.5V). See page 6 for details. 5. 10nsIndustrialspeedgradeisavailableinBF-208andBC-256packagesonly. AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(4) Symbol Parameter 70T651/9S10 Com'l Only 70T651/9S12 Com'l & Ind 70T651/9S15 Com'l Only Unit Min. Max. Min. Max. Min. Max. READ CYCLE tRC Read Cycle Time 10 ____ 12 ____ 15 ____ ns tAA Address Access Time ____ 10 ____ 12 ____ 15 ns tACE Chip Enable Access Time(3) ____ 10 ____ 12 ____ 15 ns tABE Byte Enable Access Time(3) ____ 5 ____ 6 ____ 7ns tAOE Output Enable Access Time ____ 5 ____ 6 ____ 7ns tOH Output Hold from Address Change 3 ____ 3 ____ 3 ____ ns tLZ Output Low-Z Time(1,2) 0 ____ 0 ____ 0 ____ ns tHZ Output High-Z Time(1,2) 040608 ns tPU Chip Enable to Power Up Time(2) 0 ____ 0 ____ 0 ____ ns tPD Chip Disable to Power Down Time(2) ____ 8 ____ 8 ____ 12 ns tSOP Semaphore Flag Update Pulse (OE or SEM) ____ 4 ____ 6 ____ 8ns tSAA Semaphore Address Access Time 2 10 2 12 2 15 ns 5632tbl 12 Symbol Parameter 70T651/9S10 Com'l Only 70T651/9S12 Com'l & Ind 70T651/9S15 Com'l Only Unit Min. Max. Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 10 ____ 12 ____ 15 ____ ns tEW Chip Enable to End-of-Write(3) 8 ____ 10 ____ 12 ____ ns tAW Address Valid to End-of-Write 8 ____ 10 ____ 12 ____ ns tAS Address Set-up Time(3) 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width 8 ____ 10 ____ 12 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 6 ____ 8 ____ 10 ____ ns tDH Data Hold Time(4) 0 ____ 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 4 ____ 6 ____ 8ns tOW Output Active from End-of-Write(1,2,4) 0 ____ 0 ____ 0 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ 5 ____ ns 5632 tbl 13 |
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