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GLT5160L16-8TC Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part # GLT5160L16-8TC
Description  16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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GLT5160L16-8TC Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers

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3
G-LINK Technology
DEC. 2003 (Rev.2.4)
FUNCTIONAL DESCRIPTION
The GLT5160L16 provides basic functions, bank (row) activate,
burst read / write, bank (row) precharge, and auto / self refresh.
Each command is defined by control signals of RAS, CAS and WE
at CLK rising edge. In addition to 3 signals, CS, CKE and A[10] are
used as chip select, refresh option, and precharge option,
respectively.
To know the detailed definition of commands, please see the com-
mand truth table.
Activate (ACT) [RAS = L, CAS = WE = H]
ACT command activates a row in an idle bank indicated by BA.
Read (READ) [RAS = H, CAS = L, WE = H]
READ command starts burst read from the active bank indicated by
BA. First output data appears after CAS latency. When A[10] = H at
this command, the bank is deactivated after the burst read (auto-pre-
charge, READA).
Write (WRITE) [RAS = H, CAS =WE = L]
WRITE command starts burst write to the active bank indicated by
BA. Total data length to be written is set by burst length. When
A[10] = H at this command, the bank is deactivated after the burst
write (auto-precharge, WRITEA).
Precharge (PRE)
[RAS = L, CAS = H, WE = L]
PRE command deactivates the active bank indicated by BA. This
command also terminates burst read / write operation. When A[10]
= H at this command, both banks are deactivated (precharge all,
PREA).
Auto-Refresh (REFA)
[RAS = CAS = L, WE = CKE = H]
REFA command starts auto-refresh cycle. Refresh address includ-
ing bank address are generated internally. After this command, the
banks are precharged automatically. Any other command should
not be asserted until tRC is met.
CLK
CS
RAS
CAS
WE
CKE
A[10]
Chip Select: L=select, h=deselect
Com-
Com-
Com-
Define Basic Com-
Refresh option @refresh command
Precharge Option @ precharge or read/write
command
Command Truth Table [1]
Command
Mnemonic
CKE n-
1
CKE n
CS
RAS
CAS
WE
BA
A[10
]
A[9:
0]
Deselect
DESEL
H
X
H
X
X
X
X
X
X
No Operation
NOP
H
X
L
H
H
H
X
X
X
Row Address Entry & Bank Activate
ACT
H
X
L
L
H
H
V
V
V
Single Bank Precharge
PRE
H
X
L
L
H
L
V
L
X
Precharge All Banks
PREA
H
X
L
L
H
L
V
H
X
Column Address Entry & Write
WRITE
H
X
L
H
L
L
V
L
V
Column Address Entry & Write with Auto-Precharge
WRITEA
H
X
L
H
L
L
V
H
V
Column Address Entry & Read
READ
H
X
L
H
L
H
V
L
V
Column Address Entry & Read with Auto-Precharge
READA
H
X
L
H
L
H
V
H
V
Auto-Refresh
REFA
H
H
L
L
L
H
X
X
X
Self-Refresh Entry
REFS
H
L
L
L
L
H
X
X
X
Self-Refresh Exit
REFSX
L
H
H
X
X
X
X
X
X
L
H
L
H
H
H
X
X
X
Burst Terminate
TBST
H
X
L
H
H
L
X
X
X
Mode Register Set
MRS
H
X
L
L
L
L
X
L
V
1. H = High Level, L = Low Level, V = Valid, X = Don't Care, n = CLK cycle number


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