GLT5640L32-8 datasheet(9/49 Pages) ETC

Part #	GLT5640L32-8

Description	CMOS Synchronous DRAM 2M x 32 SDRAM

Download	49 Pages

Scroll/Zoom	100%

Manufacturer	ETC [List of Unclassifed Manufacturers]

Direct Link

Logo

9 / 49 page

Dec

2003

Rev.0.3

G-Link Technology Corp.

9

G-LINK

ADVANCED

GLT5640L32

CMOS Synchronous DRAM

AC CHARACTERISTICS -

II (AC Operating Conditions Unless Otherwise Noted)

Notice :

1. The minimum number of clock cycle is determined by dividing the minimum time required with clock cycle time and them

rounding off to the next higher integer.

2. In case of row precharge interrupt, auto precharge and read burst stop.

3. A new command can be given tRC after self refresh exit.

RAS Cycle Time

Precharge to Data-out Hi-Z

ns

CLK

1

-

2

-5

-5.5

-6

-7

-8

-10

PARAMETER

SYM.

Min Max Min Max Min Max Min Max Min Max Min Max

UNIT NOTE

Operation

tRC

55

60

70

Auto Refresh

tRRC

55

60

70

RAS Active Time

tRAS

40 100K 38.5 100K 42 100K 49 100K 48 100K 50 100K

RAS Precharge Time

tRP

15

-

16.5

-

18

-

20

-

20

-

20

-

RAS to RAS Bank Active Delay

tRRD

10

-

11

-

12

-

14

-

16

-

20

-

CAS to CAS Delay

tCCD

1

-

1

-

1

-

1

-

1

-

1

-

Data-in to Precharge Command

tDPL

1

-

1

-

1

-

1

-

1

-

1

-

Data-in to Active Command

tDAL

4

-

4

-

4

-

4

-

4

-

4

-

DQM to Data-out Hi-Z

tDQZ

2

-

2

-

2

-

2

-

2

-

2

-

DQM to Data-in Mask

tDQM

0

-

0

-

0

-

0

-

0

-

0

-

CAS Latency = 3

tPROZ

3

-

3

-

3

-

3

-

3

-

3

-

CAS Latency = 2

tPROZ

-

2

-

2

-

Power Down Exit Time

tPDE

1

-

1

-

1

-

1

-

1

-

1

-

Self Refresh Exit Time

tSRE

1

-

1

-

1

-

1

-

1

-

1

-

3

Refresh Time

tREF

-

64

-

64

-

64

-

64

-

64

-

64

ms

-

RAS to CAS Delay

tRCD

15

-

16.5

-

18

-

20

-

20

-

20

-

MRS to New Command

tMRD

2

-

2

-

2

-

2

-

2

-

2

-

Similar Part No. - GLT5640L32-8

Manufacturer	Part #	Datasheet	Description
List of Unclassifed Man...	GLT5640AL16	2Mb / 72P	4M X 16 CMOS Synchronous Dynamic RAM
	GLT5640AL16-10TC	2Mb / 72P	4M X 16 CMOS Synchronous Dynamic RAM
	GLT5640AL16-5.5TC	2Mb / 72P	4M X 16 CMOS Synchronous Dynamic RAM
	GLT5640AL16-6TC	2Mb / 72P	4M X 16 CMOS Synchronous Dynamic RAM
	GLT5640AL16-7TC	2Mb / 72P	4M X 16 CMOS Synchronous Dynamic RAM

More results

Similar Description - GLT5640L32-8

Manufacturer	Part #	Datasheet	Description
Etron Technology, Inc.	EM638325	762Kb / 72P	2M x 32 Synchronous DRAM (SDRAM)
Taiwan Memory Technolog...	T436432B	707Kb / 72P	2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
Samsung semiconductor	K4S643232E-TI	100Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232F-	99Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
	K4S643232F	101Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232C	1Mb / 43P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232E	102Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	KM432S2030C	1Mb / 43P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Etron Technology, Inc.	EM639325TS-5IG	409Kb / 47P	4M x 32 bit Synchronous DRAM (SDRAM)
Samsung semiconductor	K4S643232E-	101Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

More results

GLT5640L32-8 Datasheet(PDF) 9 Page - List of Unclassifed Manufacturers

GLT5640L32-8 Datasheet(HTML) 9 Page - List of Unclassifed Manufacturers

Similar Part No. - GLT5640L32-8

Similar Description - GLT5640L32-8

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49

Datasheet Download

Link URL