GLT5160L16I-8FJ datasheet(1/45 Pages) ETC

Part #	GLT5160L16I-8FJ

Description	16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM

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GLT5160L16

ADVANCED

16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM

FEATURES

u Single 3.3 V ±0.3 V power supply

u Clock frequency 100 MHz / 125 MHz / 143 MHz/

166 MHz

u Fully synchronous operation referenced to clock rising edge

u Dual bank operation controlled by BA (Bank Address)

u CAS latency- 2 / 3 (programmable)

u Burst length- 1 / 2 / 4 / 8 & Full Page (programmable)

u Burst type- sequential / interleave (programmable)

u Industrial grade available

u Byte control by DQMU and DQML

u Column access - random

u Auto precharge / All bank precharge controlled by A[10]

u Auto refresh and Self refresh

u 4096 refresh cycles / 64 ms

u LVTTL Interface

u 400-mil, 50-Pin Thin Small Outline Package (TSOP II) with

0.8 mm lead pitch

u 60-Ball, 6.4mmx10.1mm VFBGA package with 0.65mm Ball

pitch & 0.35mm Ball diameter.

GENERAL DESCRIPTION

The GLT5160L16 is a 2-bank x 524288-word x 16-bit Synchro-

nous DRAM, with LVTTL interface. All inputs and outputs are

referenced to the rising edge of CLK. The GLT5160L16 achieves

very high speed data rate up to 166 MHz, and is suitable for main

memory or graphic memory in computer systems.

DEC. 2003 (Rev.2.4)

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